Title :
Evaluation the layout dependences on strained 22nm NMOSFETs
Author :
Qin, Jieyu ; Du, Gang ; Han, Ruqi ; Liu, Xiaoyan
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Beijing, China
Abstract :
For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.
Keywords :
MOSFET; circuit layout; stress effects; NMOSFET; asymmetrical layout; contact position; layout dependence; mechanical stress distribution; size 22 nm; tensile stress liner; CMOS technology; Layout; Logic gates; MOSFETs; Performance evaluation; Strain; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667813
