Title :
Analysis of capacitive losses in GaN devices for an isolated full bridge DC-DC converter
Author :
Ramachandran, Rakesh ; Nymand, Morten
Author_Institution :
Maersk Mc-Kinney Moller Institute, University of Southern Denmark, Odense, Denmark
Abstract :
The paper presents the analysis of capacitive losses in GaN devices for an isolated full bridge dc-dc converter. The output capacitances of GaN device are responsible for a significant part of switching losses in a hard switched converter. Detailed knowledge of output capacitance losses is therefore important in the selection of optimum number of devices for a given power level. The analysis is performed on a 130V to 50V, 1.7 kW full bridge isolated dc-dc GaN converter operating at a switching frequency of 50 kHz. The paper also presents the measured efficiency curve of the GaN converter. The converter has attained a maximum measured efficiency of 98.7%.
Keywords :
Bridge circuits; Capacitance; Gallium nitride; MOSFET; Silicon; Switches; Switching loss;
Conference_Titel :
Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
Conference_Location :
Sydney, Australia
DOI :
10.1109/PEDS.2015.7203435
