Title :
Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction
Author :
Du, Gang ; Zhang, Wei ; Wang, Juncheng ; Lu, Tiao ; Zhang, Pingwen ; Liu, Xiaoyan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
As MOSFETs scaling down to nano-scale, short channel effect(SCE) become a critical issue. Multiple channel MOSFET structure such as FINFET has well gate controllability on channel charge, and will be used in nano-scale CMOS technology. In this work the performance of 20nm bulk FINFET is investigated by Using 3D full band Monte Carlo Method with Effective Potential Quantum Correction. Gate and drain bias affect on the carrier density, velocity and energy distribution are introduced. The transit time and SSEC Cgs and Cgd as a function of Vds are showed. Results show about 0.1 psec intrinsic transit time at on state in this 20nm gate length device.
Keywords :
MOSFET; Monte Carlo methods; carrier density; 3D full band Monte Carlo method; FINFET; SCE; carrier density; drain bias affect; effective potential quantum correction; energy distribution; gate bias effect; multiple channel MOSFET structure; short channel effect; size 20 nm; velocity; Electron mobility; FinFETs; IEEE Potentials; Logic gates; Monte Carlo methods; Scattering; Three dimensional displays;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667816
