Large signal modeling of switchable ferroelectric FBARs

Author

Seungku Lee ; Lee, Victor ; Sis, Seyit Ahmet ; Mortazawi, Amir

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2012

Firstpage

24

Lastpage

27

Abstract

The large signal modeling procedure for intrinsically switchable film bulk acoustic resonators (FBARs) based on thin film barium strontium titanate (BST) is presented. Thin film BST exhibits electric field dependent permittivity and electric field induced piezoelectricity. In this paper, a large signal model which accurately describes the DC bias voltage as well as RF power dependent performance of BST FBARs is presented. Large signal simulation results obtained from this model at different bias voltages and RF power levels show good agreement with the measurement results.

Keywords

acoustic resonators; barium compounds; bulk acoustic wave devices; ferroelectric devices; strontium compounds; thin film devices; Ba_xSr_1-xTiO₃; DC bias voltage; RF power dependent performance; RF power levels; electric field dependent permittivity; electric field induced piezoelectricity; intrinsically switchable FBAR; intrinsically switchable film bulk acoustic resonators; large signal modeling; switchable ferroelectric FBAR; thin film barium strontium titanate; Electric fields; Film bulk acoustic resonators; Frequency measurement; Integrated circuit modeling; Power measurement; Radio frequency; Voltage measurement; Electrostriction; ferroelectric devices; large signal modeling; nonlinear systems component;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483726