DocumentCode
1641649
Title
A novel latching RF MEMS SPST switch
Author
Bakri-Kassem, Maher ; Mansour, Raafat R.
Author_Institution
Dept. of Electr. Eng., American Univ. of Sharjah, Sharjah, United Arab Emirates
fYear
2012
Firstpage
28
Lastpage
31
Abstract
A novel latching RF MEMS Switch is proposed. The single pole single throw (SPST) switch is built on a 20 μm thick nickel layer eliminating any potential warping due to thermal mismatch. The switch exhibits a 40 μm displacement with a power consumption of 175 mW at 80K under vacuum. The measurement was done over ambient and vacuum and over wide range of temperatures from 300 K to 80 K. The switch demonstrates an excellent RF performance up to 26 GHz.
Keywords
microswitches; microwave switches; Ni; SPST switch; frequency 26 GHz; latching RF MEMS switch; power 175 mW; single pole single throw switch; size 20 mum; temperature 300 K to 80 K; thermal mismatch; warping elimination; Actuators; Loss measurement; Nickel; Power demand; Radio frequency; Switches; Temperature measurement; Cryogenic temperature; Latching; RF MEMS; Switch; low power;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location
Amsterdam
Print_ISBN
978-1-4673-2302-4
Electronic_ISBN
978-2-87487-026-2
Type
conf
Filename
6483727
Link To Document