A process and temperature compensated ring oscillator

Author

Shyu, Yang-Shyung ; Wu, Jiin-Chuan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

283

Lastpage

286

Abstract

An on-chip oscillator with small frequency variation in a digital 0.6 μm CMOS technology is described. The oscillator utilizes a bias technique to compensate for the influences on the oscillation frequency caused by both temperature and process variations. No external components are needed in the oscillator. Simulation results show that the frequency of the proposed oscillator has a peak variation of ±6.8% for all process corners and a temperature range of 120°C. The oscillator is measured to operate at a center frequency of 680 kHz and have a peak variation of ±4.7% over 29 sample chips in two different lots and a temperature range of 35°C to 115°C. As a comparison, a conventional inverter chain oscillator is made on the same chip. The frequency variation of the conventional inverter chain is ±14.6%

Keywords

CMOS digital integrated circuits; buffer circuits; compensation; oscillators; 0.6 micron; 35 to 115 C; 680 kHz; bias technique; digital CMOS technology; onchip oscillator; oscillation frequency; process compensated ring oscillator; temperature compensated ring oscillator; CMOS technology; Circuits; Clocks; Delay; Frequency; Inverters; Ring oscillators; Temperature sensors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5705-1

Type

conf

DOI

10.1109/APASIC.1999.824084

Filename

824084