DocumentCode :
1641700
Title :
RF IC design of highly-efficient broadband polar transmitters for WiMAX and 3GPP LTE applications
Author :
Lie, D.Y.C. ; Li, Y. ; Lopez, J. ; Chen, K. ; Wu, S. ; Yang, T.Y.
Author_Institution :
Electr. & Comput. Eng. Dept., Texas Tech Univ., Lubbock, TX, USA
fYear :
2010
Firstpage :
150
Lastpage :
153
Abstract :
This paper presents highly-efficient RF polar transmitter (TX) systems that utilize the envelope-tacking (ET) technique with monolithic SiGe power amplifiers (PAs) for mobile WiMAX and 3GPP Long Term Evolution (LTE) applications. Monolithic single-ended cascode SiGe PA design capable of enhancing its power-added efficiency (PAE) is demonstrated. Four RF switches are adopted at the bases of the common-emitter transistors, which can be turned on/off in response to the desired output power. We found that self-biasing of the common-base device with ET can improve the output distortion of the cascode PA to output 18dBm and passing the stringent mobile WiMAX linearity specs with 30% PAE at 2.3GHz without predistortion. Furthermore, a differential cascode SiGe PA using the proposed ET-based polar TX system can improve the average output power to 21dBm with 33.6% PAE at 1.42 GHz, and it also passes the stringent LTE 16QAM linearity specs without needing predistortion.
Keywords :
3G mobile communication; Long Term Evolution; WiMax; broadband networks; integrated circuit design; monolithic integrated circuits; power amplifiers; radio transmitters; radiofrequency integrated circuits; 3GPP LTE application; ET-based polar TX system; Long Term Evolution; RF IC design; RF switch; SiGe; common-emitter transistor; envelope-tacking; frequency 2.3 GHz; highly-efficient RF polar transmitter system; highly-efficient broadband polar transmitter; mobile WiMAX; monolithic power amplifier; monolithic single-ended cascode PA design; power-added efficiency; self-biasing; Gain; Linearity; Power amplifiers; Power generation; Radio frequency; Silicon germanium; WiMAX;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667818
Filename :
5667818
Link To Document :
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