DocumentCode
1641852
Title
Studies on SIC process for the improvement of VPNP performance
Author
Li Rongqiang ; Zhong Yi ; Xian Wenjia ; Liu Yukui
Author_Institution
Nat. Lab. of Analog IC´s, Chongqing, China
fYear
2010
Firstpage
132
Lastpage
134
Abstract
An VPNP device optimization technology was presented for complementary bipolar process. Based on process and device simulation, an SIC process for high speed NPN transistor improvement was applied to the optimization of VPNP transistor. Sub-micron VPNP trasistor increases its feature frequency by 30%, namely, more than 3.0GHz. It features breakdown voltage of BVceo>6.0V, which results to a wider application in complementary bipolar process.
Keywords
analogue integrated circuits; transistors; SIC process; VPNP device optimization technology; complementary bipolar process; high speed NPN transistor; selectively implanted collecter; submicron VPNP trasistor; Doping; Integrated circuits; Performance evaluation; Process control; Silicon carbide; Time frequency analysis; Transistors; Analog IC; Complementary Bipolar(CB); Selectively Implanted Collecter(SIC);
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667823
Filename
5667823
Link To Document