Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation

Author

Paynter, M. ; Bensmida, S. ; Morris, K.A. ; McGeehan, J.P. ; Beach, M. ; Akmal, M. ; Lees, J. ; Benedikt, J. ; Tasker, P.

Author_Institution

Centre for Commun. Res., Univ. of Bristol, Bristol, UK

fYear

2012

Firstpage

76

Lastpage

79

Abstract

This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.

Keywords

III-V semiconductors; gallium compounds; power amplifiers; sensitivity analysis; wide band gap semiconductors; GaN; class-F design procedure; power amplifier efficiency; power amplifier model parameters; process variation; sensitivity analysis; switching mode operation; Capacitance; Gallium nitride; Integrated circuit modeling; Microwave amplifiers; Microwave circuits; Power amplifiers; Switches; design methodology; power amplifiers; semiconductor device modelling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483739