DocumentCode
1641941
Title
Study on the removal rate stability of CMP for ULSI silicon substrate
Author
Zhou, Jianwei ; Shi, Qiaoshuo ; Zhao, Qiaoyun
Author_Institution
Inst. of Microelectron., Hebei Univ. of Technol., Tianjin, China
fYear
2010
Firstpage
126
Lastpage
128
Abstract
The polishing process of Si substrate is introduced and its mechanism is analyzed theoretically in this paper. The regularity of removal rate of CMP by using circulation polishing is obtained through experimental study. Then, the stability of removal rate and its influence factors are analyzed systematically. Experiment results show that pH value, polishing temperature and viscosity are the main factors affecting the stability of removal rate. Finally, improving solutions for the removal rate fluctuation are presented.
Keywords
ULSI; chemical mechanical polishing; elemental semiconductors; silicon; substrates; CMP; ULSI silicon substrate; circulation polishing; pH value; polishing process; polishing temperature; removal rate stability; viscosity; Abrasives; Chemicals; Silicon; Slurries; Stability analysis; Thermal stability; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667826
Filename
5667826
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