Gallium nitride hybrid microwave circuits for low-noise applications

This paper presents recent work in the area of gallium nitride (GaN) low-noise microwave integrated circuits. Gallium nitride has attracted interest principally due to its power handling ability. However, its noise performance has received relatively little attention. We discuss the noise performance of several discrete devices, and how they perform in hybrid integrated circuits. The predictive and descriptive models used in our work are discussed and are compared with laboratory measurements.