Title :
An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology
Author :
Byk, E. ; Couturier, A.M. ; Camiade, M. ; Teyssandier, C. ; Hosch, M. ; Stieglauer, H. ; Fellon, P.
Author_Institution :
United Monolithic Semicond. SAS, Villebon-sur-Yvette, France
Abstract :
Design methodology and measurements of an E-band very low noise amplifier (LNA) are presented in this paper. This four stages MMIC is manufactured on UMS 4 inch 100 nm GaAs pHEMT technology with BCB coating. The chip size is 3.35 × 1.12 mm2. On-wafer measurements, close to simulation results, exhibit a gain of 22 dB associated to 4 dB noise figure in the 71-86 GHz frequency band (less than 3.5 dB in the 76-86 GHz sub-band). An output power of 10 dBm at 1 dB compression at maximum gain and 12 dB gain control dynamic range are also demonstrated in the entire frequency band by tuning the gate voltage from -3 to -2 V. To our knowledge, these performances are among the best reported up to now for an E-band LNA.
Keywords :
III-V semiconductors; MMIC amplifiers; gain control; gallium arsenide; high electron mobility transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave field effect transistors; BCB coating; E-band very low noise amplifier design methodology; GaAs; LNA measurements; four stages MMIC; frequency 71 GHz to 86 GHz; gain -3 dB to -2 dB; gain 12 dB; gain 22 dB; noise figure 4 dB; on-wafer measurements; pHEMT technology; size 100 nm; size 4 inch; variable gain control; Gain; Gallium arsenide; Logic gates; MMICs; Noise; Noise figure; PHEMTs;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
