Title :
A variable gain and output power CMOS PA with combination switch controls
Author :
Wen, Jin-Cai ; Sun, Ling-Ling
Author_Institution :
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
A variable gain and output power CMOS power amplifier is presented in this paper. With combination switch controls of three cascode devices in the driver stage, the power amplifier can achieve a variable power gain and output power (seven types). The power amplifier was fabricated in 0.35-μm standard CMOS process, and is able to deliver a power gain of 10.5~27 dB and an output P1dB (1-dB compression point) of 9.3~20.3dBm together with a PAE (power-added-efficiency) of 4.1~36.5% at 915MHz frequency and 3.3V supply respectively.
Keywords :
CMOS analogue integrated circuits; power amplifiers; combination switch controls; efficiency 4.1 percent to 36.5 percent; frequency 915 MHz; gain 10.5 dB to 27 dB; output power CMOS power amplifier; size 0.35 mum; variable gain CMOS power amplifier; voltage 3.3 V; CMOS integrated circuits; Control systems; Driver circuits; Gain; Power amplifiers; Power generation; Switching circuits; CMOS; power amplifier; switch control; variable gain;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667836
