Title :
An integrated 12 Gbps switch-mode driver MMIC with 5 VPP for digital transmitters in 100 nm GaN technology
Author :
Maroldt, S. ; Brueckner, Peter ; Quay, Ruediger ; Ambacher, Oliver ; Maier, Stefan ; Wiegner, D. ; Pascht, Andreas
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys. IAF, Freiburg, Germany
Abstract :
A digital switch-mode amplifier MMIC integrating an differential amplifier and driver was realized in an 100 nm GaN technology with a transit frequency of 80 GHz. The circuit operates up to a bit rate of 12 Gbps while it was designed for a current-mode amplifier chain. Each of the two driver output channels delivers an adjustable output voltage swing of up to 5 VPP. Due to the differential amplifier input stage with a very low minimum input voltage swing of 0.5 VPP the MMIC allows a flexible operation used as limiting amplifier or digital pre-amplifier for a GaN final switch-mode stage. The high output power density of the GaN technology allows a further integration of the final switch-mode power amplifier stage which enables for the first time a fully integrated high power digital transmitter in GaN.
Keywords :
III-V semiconductors; MMIC amplifiers; differential amplifiers; driver circuits; gallium compounds; preamplifiers; radio transmitters; wide band gap semiconductors; GaN; bit rate 12 Gbit/s; current mode amplifier chain; differential amplifier; digital preamplifier; digital switch mode amplifier MMIC; digital transmitters; frequency 80 GHz; integrated switch mode driver MMIC; limiting amplifier; size 100 mm; voltage 5 V; Differential amplifiers; Gallium nitride; Limiting; MMICs; Power amplifiers; Switches; Transmitters;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2