Title :
High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 105 hours
Author :
Waltereit, P. ; Kuhn, Jan ; Quay, Ruediger ; van Raay, Friedbert ; Dammann, Michael ; Casar, Markus ; Muller, Sebastian ; Mikulla, Michael ; Ambacher, Oliver ; Latti, J. ; Rostewitz, M. ; Hirche, K. ; Daubler, J.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
We report on technology, performance and reliability of state-of-the-art AlGaN/GaN MMICs for space applications. Our quarter-micron gate length HEMTs have breakdown voltages beyond 150 V and deliver 5 W/mm output power density at 30 V drain bias with 50% PAE at 10 GHz operating frequency. Packaged two-stage MMICs with 8 W output power for telemetry applications have a PAE above 40% with a lifetime above 105 h at a channel temperature of 200°C. Initial space evaluation tests indicate a suitable stability of our technology in space.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; semiconductor device reliability; space telemetry; AlGaN-GaN; PAE; X-band MMIC; breakdown voltages; channel temperature; efficiency 50 percent; frequency 10 GHz; operating frequency; output power density; packaged two-stage MMIC; power 8 W; quarter-micron gate length HEMT; space applications; space evaluation tests; state-of-the-art MMIC; telemetry applications; temperature 200 C; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; MODFETs; Reliability;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
