Title :
DIBL performance of 60 MeV proton-irradiated SOI MuGFETs
Author :
Agopian, P.G.D. ; Martino, J.A. ; Kobayashi, D. ; Poizat, M. ; Simoen, E. ; Claeys, C.
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel on the front transistor performance.
Keywords :
MOSFET; silicon-on-insulator; DIBL performance; back channel; buried oxide; drain induced barrier lowering; electron volt energy 60 MeV; proton-irradiated SOI MuGFET; tri-gate FinFET; Couplings; Logic gates; Performance evaluation; Protons; Radiation effects; Strain; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667839
