Title :
A high efficiency 140W power amplifier based on a single GaN HEMT device for space applications in L-band
Author :
Rochette, Stephane ; Vendier, Olivier ; Langrez, D. ; Cazaux, J. ; Kuball, M. ; Buchta, M. ; Xiong, Anbin
Author_Institution :
THALES ALENIA SPACE, Toulouse, France
Abstract :
This paper deals with the design, manufacture and test of a high efficiency power amplifier for L-band space borne applications. The circuit operates with a single 36 mm gate periphery GaN HEMT power bar die allowing both improved integration and performance as compared with standard HPA design in a similar RF power range. A huge effort dedicated to the device´s characterization and modeling has eased the circuit optimization leaning on the multi-harmonics impedances synthesis. Test results demonstrate performance up to 140 W RF output power with an associated 60% PAE for a limited 3.9 dB gain compression under 50 V supply voltage using a single GaN power bar.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; GaN; L-band space borne applications; RF power range; circuit optimization; device characterization; device modeling; efficiency 60 percent; gain 3.9 dB; gain compression; high-efficiency power amplifier design; high-efficiency power amplifier manufacture; high-efficiency power amplifier test; multiharmonic impedance synthesis; periphery HEMT power bar die; power 140 W; single-HEMT device; size 36 mm; standard HPA design; voltage 50 V; Gallium nitride; HEMTs; Logic gates; Power amplifiers; Radio frequency; Temperature measurement; Thermal management; GaN HEMT; L-band; Load Pull; Power Bar; Solid State Power Amplifier;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
