Title :
An efficient AlGaN/GaN HEMT power amplifier MMIC at K-Band
Author :
Friesicke, C. ; Kuhn, Jan ; Bruckner, P. ; Quay, Ruediger ; Jacob, A.F.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Hamburg, Germany
Abstract :
This paper presents an efficient power amplifier MMIC at K-Band (20 GHz) designed for a 0.25 μm AlGaN/GaN HEMT process on three-inch s.i.-SiC substrates. A low-loss network topology is used for second-harmonic output matching to achieve high PAE. The measured amplifier has a maximum PAE of 41% and an associated output power of 31.4dBm when operated at a drain voltage of 20V. At 35V drain voltage, the amplifier exhibits a PAE of 34% and an associated output power of 34 dBm.
Keywords :
HEMT circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; integrated circuit design; network topology; AlGaN-GaN; HEMT power amplifier; K-band; MMIC; drain voltage; frequency 20 GHz; low-loss network topology; second-harmonic output matching; Density measurement; Gain; Gallium nitride; HEMTs; MMICs; Power generation; Power measurement;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
