Title :
W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology
Author :
van Heijningen, M. ; Rodenburg, M. ; van Vliet, Frank E. ; Massler, Hermann ; Tessmann, A. ; Bruckner, P. ; Muller, Sebastian ; Schwantuschke, Dirk ; Quay, Ruediger ; Narhi, T.
Author_Institution :
TNO, The Hague, Netherlands
Abstract :
The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10 dB of power gain is reached for a compression level of around 2 dB per stage.
Keywords :
MMIC amplifiers; power amplifiers; AlGaN-GaN; W band power amplifier MMIC; dual stage amplifier; frequency 90 GHz; output power gain; power 400 mW; size 0.1 mum; voltage 20 V; Gain; Gallium nitride; Impedance matching; Logic gates; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
