Title :
RF characterization of deep-submicron DRAM-embedded CMOS process
Author :
Park, Seong-Ho ; Lim, Gwang-Hyun ; Lee, Yong-Hee
Author_Institution :
ASIC Team, Samsung Electron. Co. Ltd., Kyungki, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
In this paper rf characteristics of a 0.25 μm DRAM embedded CMOS process, focused on the n-MOSFET and the spiral inductor of the critical devices in rf CMOS circuit design, have been investigated. An extremely high cutoff frequency of 44 GHz, high maximum operating frequency of 29 GHz, and a de-embedded minimum noise figure of 1.0 dB have been obtained for a 0.24 μm n-MOSFET. As for the spiral inductors, we obtained a peak quality factor of 5.2 at 3.6 nH for a 5-turn inductor and also an inductance of 1.2 to 22.6 nH for inductors with various numbers of turns. These figures of merit seem to be suitable for rf circuits with operating frequency up to 2.5 GHz although the low quality factor of the spiral inductor should be improved
Keywords :
CMOS digital integrated circuits; DRAM chips; MOSFET; Q-factor; S-parameters; UHF integrated circuits; application specific integrated circuits; embedded systems; field effect MMIC; inductance; inductors; integrated circuit noise; 0.25 mum; 1 dB; 2.5 GHz; 29 GHz; 44 GHz; 5-turn inductor; RF characterization; S-parameter measurement patterns; cutoff frequency; de-embedded minimum noise figure; deep-submicron DRAM-embedded CMOS process; figures of merit; maximum operating frequency; n-MOSFET; peak quality factor; rf CMOS circuit design; spiral inductor; CMOS process; Circuit synthesis; Cutoff frequency; Inductors; MOSFET circuits; Noise figure; Q factor; Radio frequency; Random access memory; Spirals;
Conference_Titel :
ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5705-1
DOI :
10.1109/APASIC.1999.824123
