Title :
A new type of CMOS inverter with Lubistor load and TFET driver for sub-20 nm technology generation
Author :
Chen, Hsuan-Hsu ; Lin, Jyi-Tsong ; Lu, Kuan-Yu ; Eng, Yi-Chuen ; Lin, Po-Hsieh
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
This paper presents a complementary Lubistor and TFET (CLTFET) inverter, which is composed of a lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) load and a tunneling field effect transistor (TFET) driver. Based on the measurement data of Lubistor and TFET devices published, we have for the first time drawn the load lines and operation point line (Q line) of the new designed CLTFET compared with the conventional CTFET to verify its feasibility. The delay time is improved more than 29.5%. Additionally, due to its unique structure and the output node being shared by the load and the driver, the integration density of it can be reduced dramatically. The area benefit thus more than 32.6% has been achieved compared with the conventional CTFET layout.
Keywords :
CMOS integrated circuits; driver circuits; field effect transistors; insulated gate bipolar transistors; invertors; tunnelling; CMOS inverter; CTFET layout; TFET driver; complementary Lubistor and TFET; integration density; size 20 nm; tunneling field effect transistor; CMOS integrated circuits; Current measurement; Delay; Driver circuits; Inverters; Load modeling; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667845
