Title :
Noise modeling of GaN HEMT devices
Author :
Rudolph, Matthias ; Doerner, Ralf ; Ngnintendem, E. ; Heinrich, Wolfgang
Author_Institution :
Dept. of RF & Microwave Tech., Brandenburg Univ. of Technol., Cottbus, Germany
Abstract :
GaN HEMT technology is increasingly used not only for power applications, but also for low-noise amplification. However, systematic assessment of the validity of common noise models like the Pucel and Pospieszalski approaches are rarely found in the literature. This paper aims at closing this gap by validating the two model approaches for different devices and bias points.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; GaN; HEMT devices; Pospieszalski model; Pucel model; bias point; noise modeling; Gallium nitride; HEMTs; Logic gates; Microwave circuits; Microwave integrated circuits; Noise; MODFETs; noise; semiconductor device modeling; semiconductor device noise modeling;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
