DocumentCode
1642581
Title
Selection of power semiconductor devices for the DAB DC-DC converter for aerospace applications
Author
Naayagi, R.T.
Author_Institution
Sch. of Electr. & Electron. Eng., Newcastle Univ., Singapore, Singapore
fYear
2015
Firstpage
499
Lastpage
502
Abstract
This paper presents the guidelines for selecting suitable power semiconductor devices for the dual active bridge (DAB) DC-DC converter targeting aerospace applications. The main power loss in a switching power supply is the loss associated with power semiconductor devices. The high frequency operation of power electronics reduces the size of magnetic components. As a result, a smaller and lighter circuit design is feasible. However, the high switching frequency increases the power device losses. Therefore, the selection of appropriate power devices is essential to design efficient power electronics. This paper clearly presents the guidelines for selecting suitable power devices (IGBTs) for a 20kW, 540V/125V, 20kHz DAB converter prototype meant for use in an aerospace application.
Keywords
DC-DC power convertors; bridge circuits; insulated gate bipolar transistors; power semiconductor devices; power supplies to apparatus; switched mode power supplies; DAB DC-DC converter; IGBT; aerospace application; dual active bridge DC-DC converter; power loss; power semiconductor device selection; switching power supply; DC-DC power converters; Insulated gate bipolar transistors; Junctions; MOSFET; Semiconductor diodes; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
Conference_Location
Sydney, NSW
Type
conf
DOI
10.1109/PEDS.2015.7203479
Filename
7203479
Link To Document