0.1µm GaAs pHEMT technology and associated modelling for millimeter wave low noise amplifiers

Applications in the range of E to W bands are emerging during the last years specially in the field of Radio and security for active scanning systems. It required both low noise receiver and medium power amplifier which needs to use high performances, reliable millimeter wave technology. This paper describes basic fundamental of a 0.1 μm gate length process in term of process, characteristics and modelling. A specific emphasis is attached to the modelling issue in this domain of frequency and the difficulty to get reliable analysis. It is stressed at the end that thanks to accurate modelling in the low frequency part (Ka to Q bands), it allows to predict the behaviour of the device in E band. This methodology has been successfully applied to the design of a wideband LNA and HPA.