Title :
Realization of high-Q inductors using wirebonding technology
Author :
Kim, Sung-Jin ; Lee, Yong-Goo ; Yun, Sang-Ki ; Lee, Hai-Young
Author_Institution :
Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
Two types of novel high-Q vertical on-chip inductors using wirebonding technology are proposed for low cost and high performance Si-RFIC´s. The new inductors show significant improvements of the quality factor and the self-resonant frequency. Their measured maximum quality factors are about 3-times higher than those of the planar spiral inductors (7 for 3.4 nH, 6 for 5 nH) at most. From these experimental results, the bondwire inductors are expected to greatly improve the performance and the production cost of Si-RFIC´s
Keywords :
Q-factor; UHF integrated circuits; inductors; lead bonding; silicon; Si; Si RFIC; bondwire inductors; high-Q inductors; quality factor; self-resonant frequency; vertical on-chip inductors; wirebonding technology; Circuits; Costs; Frequency; Inductors; Manufacturing; Q factor; Silicon; Spirals; Strips; Wafer bonding;
Conference_Titel :
ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5705-1
DOI :
10.1109/APASIC.1999.824149
