Title :
The scaling properties of CHISEL and CHE injection efficiency in MOSFETs and flash memory cells
Author :
Esseni, D. ; Selmi, L. ; Ghetti, A. ; Sangiorgi, E.
Author_Institution :
DIEGM, Udine, Italy
Abstract :
This paper addresses issues related to the scaling of the substrate enhanced gate current in MOSFETs. As a first step, a Monte Carlo model of the phenomenon based on the impact ionization feedback mechanism has been implemented and thoroughly verified. Then, by comparing model predictions with measurements on advanced devices for NVM applications, we identify the scaling laws of the injection efficiency in the conventional Channel Hot Electron regime (CHE) and in the substrate enhanced one. The results demonstrate that the improvement of injection efficiency induced by the substrate voltage becomes smaller as the gate length is reduced in a given technology. This feature is physically explained and its implications on device architecture and applications are discussed.
Keywords :
MOSFET; Monte Carlo methods; charge injection; flash memories; hot carriers; impact ionisation; semiconductor device models; CHE injection efficiency; CHISEL injection efficiency; MOSFET; Monte Carlo model; channel hot electron injection; channel initiated secondary electron injection; flash memory; impact ionization feedback; nonvolatile memory; scaling properties; substrate enhanced gate current; Channel hot electron injection; Charge carrier processes; Feedback; Flash memory cells; Impact ionization; MOSFETs; Monte Carlo methods; Nonvolatile memory; Substrate hot electron injection; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824150
