A mathematical modelling approach for the large-signal performance prediction of microwave electron devices

Author

Filicori, F. ; Vannini, G.

Author_Institution

Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

fYear

1991

Firstpage

166

Abstract

A general-purpose mathematical model for microwave electron devices (e.g., MESFETs, bipolar transistors, diodes, etc.) is proposed. It is based on assumptions valid both for field effect and bipolar devices in typical large-signal operating conditions. Moreover, it can easily be identified through conventional measurements and is particularly suitable for nonlinear microwave circuit analysis based on harmonic balance techniques. The validation tests are carried out on a GaAs MESFET NEC NE71000, by means of simulations with an accurate equivalent circuit and comparisons with measured results. The results confirm the validity of the proposed approach

Keywords

III-V semiconductors; Schottky gate field effect transistors; bipolar transistors; gallium arsenide; nonlinear network analysis; solid-state microwave devices; FETs; GaAs; MESFETs; NE71000; NEC; bipolar devices; bipolar transistors; diodes; equivalent circuit; field effect devices; harmonic balance techniques; large-signal operating conditions; large-signal performance prediction; mathematical model; microwave electron devices; nonlinear microwave circuit analysis; semiconductors; Bipolar transistors; Circuit testing; Diodes; Electron devices; MESFETs; Mathematical model; Microwave devices; Microwave measurements; Microwave theory and techniques; Particle measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean

Conference_Location

LJubljana

Print_ISBN

0-87942-655-1

Type

conf

DOI

10.1109/MELCON.1991.161805

Filename

161805