Title :
Surface free technology by laser annealing (SUFTLA)
Author :
Shimoda, T. ; Inoue, Shingo
Author_Institution :
Base Technol. Res. Center, Seiko Epson Corp., Nagano, Japan
Abstract :
A new technology, which enables the transfer of thin films or thin film devices from original substrate to any substrate by using laser annealing, has been investigated. This technology was named SUFTLA which stands for surface free technology by laser annealing. Low temperature (/spl les/425/spl deg/C) polycrystalline-silicon thin film transistors (poly-Si TFTs) and TFT circuits could be successfully transferred from glass or quartz substrate to plastic film. The circuit functionalities of CMOS ring oscillators were not affected by this transfer.
Keywords :
elemental semiconductors; laser beam annealing; liquid crystal displays; silicon; thin film transistors; 425 degC; LCDs; SUFTLA; Si; TFT circuits; circuit functionalities; laser annealing; polysilicon thin film transistors; surface free technology; Annealing; CMOS technology; Glass; Ring lasers; Substrates; Surface emitting lasers; Temperature; Thin film circuits; Thin film devices; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824153
