Reproducible high field effect mobility polysilicon thin film transistors involving pulsed Nd:YVO/sub 4/ laser crystallization

Author

Helen, Y. ; Dassow, R. ; Mourgues, K. ; Bonnaud, O. ; Mohammed-Brahim, T. ; Raoult, F. ; Koehler, J.R. ; Werner, J.H. ; Lemoine, D.

Author_Institution

Groupe de Microelectron. et Visualisation, Rennes I Univ., France

fYear

1999

Firstpage

297

Lastpage

300

Abstract

We fabricated low temperature TFTs on low-cost glass substrates for large area electronic applications. A newly developed crystallization method uses a pulsed diode pumped Nd:YVO/sub 4/ laser. The high repetition capability of up to 100 kHz of this laser results in high throughput rates associated with a scanning speed of up to 5 cm/s. One of the remarkable features-of the TFTs is a field effect mobility mean value of 350 cm/sup 2//Vs with a standard deviation of 5%.

Keywords

carrier mobility; crystallisation; elemental semiconductors; laser materials processing; silicon; thin film transistors; 100 kHz; Si; YVO/sub 4/:Nd; high field effect mobility transistors; large area electronic applications; polysilicon thin film transistors; pulsed laser crystallization; repetition capability; scanning speed; throughput rates; Crystallization; Diodes; Glass; Laser excitation; Optical pulses; Pump lasers; Substrates; Temperature; Throughput; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824155

Filename

824155