Title :
70–105 GHz wideband GaN power amplifiers
Author :
Margomenos, A. ; Kurdoghlian, A. ; Micovic, M. ; Shinohara, K. ; Brown, D.F. ; Bowen, R. ; Milosavljevic, I. ; Grabar, R. ; Butler, Charles ; Schmitz, A. ; Willadsen, P.J. ; Madhav, M. ; Chow, D.H.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
We report a new 70-105 GHz wideband GaN power amplifier which can enable the next generation of E and W-band transmitter modules. Two versions of the amplifier are presented. Across the 70-105 GHz range the balanced design demonstrates excellent S11 and S22 at -20 dB, small signal gain above 16 dB, output power above 20 dBm with associated gain higher than 16 dB and power added efficiency over 6%. By increasing the compression levels of the amplifier at 90 GHz we achieved output power of 24.5 dBm with associated gain of 12.4 dB and power added efficiency of 13.2%. The presented amplifier can be utilized in wideband transmitter modules covering E and W-band or in application specific modules covering narrower sections of the band (71-76 GHz, 81-86 GHz, 90-96 GHz) where they can be combined with higher power GaN amplifiers.
Keywords :
III-V semiconductors; field effect MIMIC; gallium compounds; millimetre wave power amplifiers; radio transmitters; wide band gap semiconductors; wideband amplifiers; GaN; frequency 70 GHz to 105 GHz; next generation E-band transmitter module; next generation W-band transmitter module; power added efficiency; wideband power amplifiers; wideband transmitter modules; Couplers; Gain; Gallium nitride; Power amplifiers; Power generation; Power measurement; Wideband; Gallium nitride; millimeter wave integrated circuits; power amplifiers;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2