Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

Author

Lin, C.W. ; Yang, M.Z. ; Yeh, C.C. ; Cheng, L.J. ; Huang, T.Y. ; Cheng, H.C. ; Lin, H.C. ; Chao, T.S. ; Chang, C.Y.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1999

Firstpage

305

Lastpage

308

Abstract

A complete performance and reliability study on effects of different plasma treatments (NH/sub 3/ and N/sub 2/O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600/spl deg/C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

Keywords

crystallisation; elemental semiconductors; laser beam annealing; semiconductor device reliability; silicon; thin film transistors; N/sub 2/O; NH/sub 3/; crystallization methods; degradation behaviors; excimer laser annealing; fabrication methods; low temperature polysilicon; low temperature polysilicon TFTs; oxidized wafer; plasma treatments; reliability; solid phase crystallization; stressing conditions; substrate types; Crystallization; Degradation; Electric variables; Electron traps; Hot carriers; Plasma devices; Plasma properties; Silicon; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824157

Filename

824157