Hydrogenated amorphous-silicon thin-film transistor structure with buried field plate

Author

Nahm, J.-Y. ; Lan, J.-H. ; Kanicki, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1999

Firstpage

309

Lastpage

312

Abstract

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) structure containing an extra field plate under the gate electrode is proposed. In this a-Si:H TFT, even at the high drain-to-source (V/sub DS/) and gate-to-source (V/sub GS/) voltages, a low OFF-current and a high ON/OFF-current ratio can be achieved by alleviating a high electric field at the drain electrode edge. It is expected that this a-Si:H TFT structure can be used for active-matrix reflective cholesteric liquid-crystal displays that require high data and gate driving voltages.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; liquid crystal displays; silicon; thin film transistors; OFF-current; ON/OFF-current; Si:H; active-matrix reflective cholesteric liquid-crystal displays; buried field plate; drain electrode edge; drain-to-source voltage; electric field; gate driving voltages; gate electrode; gate-to-source voltage; thin-film transistor structure; Active matrix technology; Amorphous silicon; Chromium; Electrodes; Glass; Liquid crystal devices; Liquid crystal displays; Passivation; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824158

Filename

824158