Title :
A low-voltage RF amplifier using parallel triode MOSFET linearizing technique
Author :
Cao, Ke ; Yang, Huazhong ; Wang, Hui
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A low-voltage CMOS radio frequency amplifier using linearizing technique is presented in this paper. In this circuit, a parallel MOSFET in the triode region was used to boost the linearity. The circuit was fabricated with SMIC 0.18 μm CMOS process. Measurement shows that the input-referred 3rd-order intercept point (IIP3) was improved by about 5 dB with little performances penalty.
Keywords :
CMOS integrated circuits; MOSFET; linearisation techniques; radiofrequency amplifiers; radiofrequency integrated circuits; triodes; 0.18 micron; CMOS radio frequency amplifier; MOSFET linearizing technique; SMIC; complementary metal-oxide-semiconductor; input-referred 3rd-order intercept point; low-voltage RF amplifier; parallel triode; CMOS process; Circuit noise; Frequency measurement; High power amplifiers; Linearity; Low voltage; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; System-on-a-chip;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Print_ISBN :
0-7803-9128-4
DOI :
10.1109/MAPE.2005.1618056
