• DocumentCode
    1642833
  • Title

    A low-voltage RF amplifier using parallel triode MOSFET linearizing technique

  • Author

    Cao, Ke ; Yang, Huazhong ; Wang, Hui

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • Volume
    2
  • fYear
    2005
  • Firstpage
    863
  • Abstract
    A low-voltage CMOS radio frequency amplifier using linearizing technique is presented in this paper. In this circuit, a parallel MOSFET in the triode region was used to boost the linearity. The circuit was fabricated with SMIC 0.18 μm CMOS process. Measurement shows that the input-referred 3rd-order intercept point (IIP3) was improved by about 5 dB with little performances penalty.
  • Keywords
    CMOS integrated circuits; MOSFET; linearisation techniques; radiofrequency amplifiers; radiofrequency integrated circuits; triodes; 0.18 micron; CMOS radio frequency amplifier; MOSFET linearizing technique; SMIC; complementary metal-oxide-semiconductor; input-referred 3rd-order intercept point; low-voltage RF amplifier; parallel triode; CMOS process; Circuit noise; Frequency measurement; High power amplifiers; Linearity; Low voltage; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; System-on-a-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-9128-4
  • Type

    conf

  • DOI
    10.1109/MAPE.2005.1618056
  • Filename
    1618056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1642833