Title :
Influence of negative ions in a source plasma on the excess energy of a low-energy ion beam
Author :
Sakudo, N. ; Hayashi, K. ; Kawasaki, A. ; Ikenaga, N. ; Sakaguchi, N.
Author_Institution :
Adv. Mater. Sci. Res. & Dev. Center, Kanazawa Inst. of Technol., Ishikawa, Japan
Abstract :
Summary form only given. An ion source plasma as well as a process plasma for semiconductor device fabrication usually contains some negative ions besides the basic charged particles, positive ions and electrons. In this paper, we study the influence of the negative ions on the excess energy. The increase in the density of negative ions decreases the plasma potential and the excess energy.
Keywords :
ion beams; negative ions; plasma applications; plasma production; semiconductor device manufacture; basic charged particles; electrons; excess energy; low-energy ion beam; negative ions; plasma potential; positive ions; process plasma; semiconductor device fabrication; source plasma; Atomic measurements; Ion beams; Plasma applications; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma simulation; Plasma sources; Plasma temperature;
Conference_Titel :
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location :
Raleigh, NC, USA
Print_ISBN :
0-7803-4792-7
DOI :
10.1109/PLASMA.1998.677803
