Title :
A novel HBT parameter extraction routine based on HICUM
Author :
Chen, Zhanfei ; Sun, Lingling ; Huang, Jiajun
Author_Institution :
Microelectron. CAD Center, Hang Zhou Dianzi Univ., China
Abstract :
A novel HBT parameter extraction routine based on HICUM has been presented in this paper. With the on-wafer measurement results of CV, IV and S-parameter in certain bias condition, the performance of device is expressed and modeled in a clear form.
Keywords :
S-parameters; heterojunction bipolar transistors; wafer-scale integration; CV parameter; HBT parameter extraction routine; HICUM; IV parameter; S-parameter; bias condition; on-wafer measurement; Capacitors; Circuit testing; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Parameter extraction; Radio frequency; Resistors; Scattering parameters; Sun;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Print_ISBN :
0-7803-9128-4
DOI :
10.1109/MAPE.2005.1618059
