Title :
Role of base layer in CVD Si/sub 3/N/sub 4/ stack gate dielectrics on the process controllability and reliability in direct tunneling regime
Author :
Eriguchi, K. ; Harada, Y. ; Niwa, M.
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan
Abstract :
The roles of the base layer in Si/sub 3/N/sub 4//SiON stack gate dielectrics on the dielectric reliability, MOSFET performance and process controllability are investigated. The critical SiON-base layer thickness is determined as /spl sim/1 nm from the TDDB results and the physical analysis based on X-ray photoelectron spectroscopy. The obtained thickness is considered to attribute to the nitrogen profile in the SiON base and the strained layer thickness near SiON/Si interface.
Keywords :
CVD coatings; MOSFET; X-ray photoelectron spectra; dielectric thin films; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; silicon compounds; tunnelling; MOSFET performance; Si/sub 3/N/sub 4/-SiON; TDDB results; X-ray photoelectron spectroscopy; dielectric reliability; direct tunneling regime; physical analysis; process controllability; reliability; stack gate dielectrics; strained layer thickness; Annealing; Controllability; Dielectric substrates; Electrodes; Electrons; MOSFET circuits; Nitrogen; Semiconductor device reliability; Spectroscopy; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824161
