DocumentCode
1642961
Title
Analysis of high voltage TDDB measurements on Ta/sub 2/O/sub 5//SiO/sub 2/ stack
Author
Degraeve, R. ; Kaczer, B. ; Houssa, M. ; Groeseneken, G. ; Heyns, M. ; Jeon, J.S. ; Halliyal, A.
Author_Institution
IMEC, Leuven, Belgium
fYear
1999
Firstpage
327
Lastpage
330
Abstract
Time-dependent dielectric breakdown measurements on a SiO/sub 2//Ta/sub 2/O/sub 5/ (1.4/6 nm) stack are analyzed. After comparing current/voltage-curves, statistical distribution and time-to-breakdown values of this stack with SiO/sub 2/-layers, it is concluded that the high voltage breakdown of the stack is completely determined by the interfacial SiO/sub 2/-layer. Simple extrapolation of the time-to-breakdown to low voltages will yield incorrect reliability predictions.
Keywords
dielectric thin films; electric breakdown; silicon compounds; titanium compounds; Ta/sub 2/O/sub 5/-SiO/sub 2/; Ta/sub 2/O/sub 5//SiO/sub 2/ stack; current-voltage characteristics; high voltage measurement; interfacial layer; reliability; statistical distribution; time-dependent dielectric breakdown; time-to-breakdown; Capacitance measurement; Current density; Data mining; Dielectric constant; Electric breakdown; Solid modeling; Stress; Thickness measurement; Tunneling; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824162
Filename
824162
Link To Document