A flexible test bench for power semiconductor switching loss measurements

In this paper a flexible double pulse test bench for switching loss characterization of power semiconductors is presented. It allows the characterization of switching losses for conventional power semiconductors such as IGBTs and power MOSFETs, but also for modern fast switching wide bandgap devices. Contrary to alternative test bench topologies, test voltage and current can be adjusted independently and without any changes to the test setup from zero to up to 1 kV and 1 kA, respectively. A modular design simplifies the adaption to different test scenarios and enables the usage of widely available off-the-shelf active and passive components. The topology features low energy stored in the dc link inductor and the high voltage capacitor, thus improving safety in case of a device failure.