DocumentCode
1642975
Title
BJMOSFET based on SOI
Author
Yun, Zeng ; Zhang Van ; Li Xiaolel ; Lin, Zhang ; Shaohua, Zhou
Author_Institution
Microelectron. Inst., Hunan Univ., Changsha, China
Volume
2
fYear
2005
Firstpage
887
Abstract
A new-style compound device of BJT and MOS-bipolar junction MOSFET based on SOI (SOI BJMOSFET) has been proposed. The structure of SOI BJMOSFET was introduced and the work principle was analyzed reasonably. Its different characteristics were also discussed in detailed. From the detailed analysis and research, it is concluded that SOI BJMOSFET is assuredly a much more excellent new-style solid electronic device.
Keywords
MOSFET; bipolar transistors; silicon-on-insulator; bipolar junction MOSFET-based SOI; compound solid electronic device; metal oxide semiconductor field effect transistor; silicon-on-insulator; Doping; FETs; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon; Solids; Substrates; Thick films; Voltage; BJMOSFET; SOI; solid electronic device;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Print_ISBN
0-7803-9128-4
Type
conf
DOI
10.1109/MAPE.2005.1618062
Filename
1618062
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