Title :
Fundamental diffusion issues for deep-submicron device processing
Author :
Cowern, N.E.B. ; Jaraiz, M. ; Cristiano, F. ; Claverie, A. ; Mannino, G.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
We report recent advances in understanding of defects and diffusion in silicon. The paper focusses on unifying principles and shows how these pave the way to TCAD as a strategic tool in the development of deep-submicron device technology.
Keywords :
diffusion; elemental semiconductors; semiconductor process modelling; silicon; technology CAD (electronics); Si; TCAD; deep-submicron device processing; defect; dopant diffusion; silicon; Annealing; Costs; Frequency; Implants; Impurities; Laboratories; Paper technology; Semiconductor process modeling; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824163
