• DocumentCode
    1643005
  • Title

    Fundamental diffusion issues for deep-submicron device processing

  • Author

    Cowern, N.E.B. ; Jaraiz, M. ; Cristiano, F. ; Claverie, A. ; Mannino, G.

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • fYear
    1999
  • Firstpage
    333
  • Lastpage
    336
  • Abstract
    We report recent advances in understanding of defects and diffusion in silicon. The paper focusses on unifying principles and shows how these pave the way to TCAD as a strategic tool in the development of deep-submicron device technology.
  • Keywords
    diffusion; elemental semiconductors; semiconductor process modelling; silicon; technology CAD (electronics); Si; TCAD; deep-submicron device processing; defect; dopant diffusion; silicon; Annealing; Costs; Frequency; Implants; Impurities; Laboratories; Paper technology; Semiconductor process modeling; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.824163
  • Filename
    824163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1643005