Anomalous diffusion of dopant in Si substrate during oxynitride process

Author

Yaegashi, T. ; Aoki, N. ; Takeuchi, Y. ; Hazama, H. ; Aritome, S. ; Shirota, R.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1999

Firstpage

341

Lastpage

344

Abstract

Unexpectedly enormously enhanced diffusions of B and P in Si substrate during gate oxynitride process have been clarified for the first time. The apparent diffusion enhancement is observed in the reoxidation process after nitridation in NH/sub 3/ ambient. The oxidation enhanced diffusion (OED) factors of B and P are about 15 times larger than the normal OED factor, which is ascribed to the increase of interstitial Si at oxynitride/Si interface. The enormously enhanced diffusion affects the device characteristics and should be taken into account in order to perform accurate simulation for submicron MOSFETs with oxynitride gate.

Keywords

MOSFET; diffusion; elemental semiconductors; interstitials; nitridation; oxidation; semiconductor doping; silicon; Si substrate; Si:B; Si:P; dopant diffusion; gate oxynitride process; interstitial; oxidation enhanced diffusion; submicron MOSFET; Annealing; Argon; Boron; Laboratories; MOSFET circuits; Microelectronics; Oxidation; Semiconductor films; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824165

Filename

824165