Title :
Threshold voltage instability in AlGaN/GaN HEMTs
Author :
Ting-Fu Chang ; Tsung-Chieh Hsiao ; Szu-Han Huang ; Chih-Fang Huang ; Yun-Hsiang Wang ; Samudra, Ganesh S. ; Liang, Yung C.
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In this study, the threshold voltage instability of the Schottky gate HEMT, the p-GaN gate HEMT, and the recessed MIS gate HEMT is investigated. The annealed p-GaN gate HEMT and Schottky gate HEMT are relatively stable. The threshold voltage shift of the recessed MIS gate HEMT, which is attributed to the trapping of electrons in the gate dielectric, can be as large as 2.5 V depending on the stress conditions. The activation energies of the trapping and de-trapping are extracted from the time constant spectra for the recessed MIS gate HEMT.
Keywords :
MISFET; Schottky gate field effect transistors; circuit stability; electron traps; high electron mobility transistors; AlGaN-GaN; AlGaN-GaN HEMT; MIS gate HEMT; Schottky gate HEMT; electron trapping; gate dielectric; p-GaN gate HEMT; recessed MIS gate HEMT; threshold voltage instability; threshold voltage shift; time constant spectra; voltage 2.5 V; HEMTs; Logic gates; MODFETs; Stress; Temperature measurement; Threshold voltage; Voltage measurement;
Conference_Titel :
Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
Conference_Location :
Sydney, NSW
DOI :
10.1109/PEDS.2015.7203502
