Single electron and few electron memory cells

Memory cells based on single electron devices fabricated with silicon technology will be required if the progress of memories to the multi-gigascale together with high speed operation is to be achieved. Single electron charging effects in nanowires of silicon or polysilicon can be coupled to conventional MOSFETs or tunnelling barrier structures can be placed at the gate of the MOSFET to make memory cells. Although some of these structures only work at low temperatures some have also demonstrated room temperature operation.