Title :
Technique allows simple design of microwave DROs
Author :
Li-Li, Wang ; Zheng, Ke Xi ; Xiao-li, Xi
Author_Institution :
Xi´´an Univ. of Technol., China
Abstract :
A new type of highly stabilized GaAs FET oscillator using a dielectric resonator and a stabilized resistor in the feedback circuit has been developed. The oscillator fabricated with a microwave integrated circuit has a high external quality factor. Dielectric-resonator oscillators (DROs) offer such advantages as good frequency stability, the possibility of tuning with varactors, and simple, low-cost construction. A DOR design method is available that combines accuracy and simplicity as it requires only small-signal parameters (which are typically available from manufacturers). The microwave characteristics of the GaAs FET oscillator have revealed: 1) High efficiency of 20 percent output power at 10 GHz, 2) a wide tuning range more than 1000 MHz, 3) a wide oscillation frequency from 9 to 14 GHz with same MIC pattern by using five dielectric resonators of different sizes, 4) a high-frequency stability as low as 150 kHz in the temperature range from -20 to +60 °C.
Keywords :
circuit feedback; circuit stability; circuit tuning; dielectric resonator oscillators; frequency stability; microwave field effect transistors; microwave oscillators; 20 to 60 degC; 9 to 14 GHz; FET oscillator; GaAs; MIC pattern; dielectric-resonator oscillator; feedback circuit; field effect transistor; frequency stability; microwave DRO design; microwave integrated circuit; oscillator fabrication; quality factor; resistor stability; small-signal parameter; varactor; wide tuning range; Dielectrics; Feedback circuits; Frequency; Gallium arsenide; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Microwave theory and techniques; Resistors; Tuning;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Print_ISBN :
0-7803-9128-4
DOI :
10.1109/MAPE.2005.1618076