Title :
Gate oxides in 50 nm devices: thickness uniformity improves projected reliability
Author :
Weir, B.E. ; Silverman, P.J. ; Alam, M.A. ; Baumann, F. ; Monroe, D. ; Ghetti, A. ; Bude, J.D. ; Timp, G.L. ; Hamad, A. ; Oberdick, T.M. ; Zhao, N.X. ; Ma, Y. ; Brown, M.M. ; Hwang, D. ; Sorsch, T.W. ; Madic, J.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We demonstrate that reliability projections can be improved significantly if oxide thickness uniformity is improved. Our results include a Weibull slope of 1.38 for an extremely uniform 1.6 nm oxide, and also a steeper voltage scaling factor than has been used in the past. Transistors with 50 nm gate-length and /spl sim/1.5 nm oxides exhibit soft breakdown, suggesting that it may be possible to relax current reliability specifications.
Keywords :
MOSFET; Weibull distribution; semiconductor device breakdown; semiconductor device reliability; 50 nm; MOS transistor; Weibull slope; gate oxide; reliability; soft breakdown; thickness uniformity; voltage scaling factor; Capacitors; Current density; Dielectric devices; Electric breakdown; Maximum likelihood estimation; Semiconductor device modeling; Semiconductor device reliability; Silicon compounds; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824187
