First 0.25µm GaN MMICs dedicated to compact,wideband and high SFDR receiver

In the frame of compact, lightweight and wideband multifunction system, two MMIC key components for the realization of wide band, compact and high SFDR receiver have been developed: a 6-18 GHz mixer and an X band active filter. To achieve high linearity performance, they are both developed using the UMS GaN 0.25 μm pHEMT Technology. Compared to equivalent GaAs circuits, a 5 to 10 dB improvement is achieved on linearity characteristics. To our knowledge, it is the first time that such GaN circuits are reported, exhibiting this level of performance.