Title :
Analysis of tunneling currents and reliability of NMOSFETs with sub-2 nm gate oxides
Author :
Yang, N. ; Henson, W.K. ; Wortman, J.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
This work examines different components of direct tunneling currents and analyzes the oxide reliability in scaled NMOSFETs with ultrathin gate oxides (1.4-2 nm). It concludes that the source/drain extension to the gate overlap regions have strong effects on the device performance in terms of both gate tunneling currents and oxide reliability.
Keywords :
MOSFET; insulating thin films; semiconductor device reliability; tunnelling; 1.4 to 2 nm; NMOSFETs; device performance; direct tunneling currents; gate overlap regions; gate tunneling currents; oxide reliability; source/drain extension; ultrathin gate oxides; Current measurement; Electric breakdown; Energy consumption; Frequency; Intrusion detection; MOS capacitors; MOSFET circuits; Rapid thermal processing; Reliability engineering; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824191
