A low-voltage fully-integrated CMOS power amplifier for mobile WiMAX subscriber station

Author

Renjing Pan ; Kiat Seng Yeo ; Manh Anh Do ; Chirn Chye Boon ; Jiangmin Gu

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

Firstpage

21

Lastpage

24

Abstract

This paper describes a low-voltage fully-integrated CMOS power amplifier for 3.5 GHz mobile WiMAX (IEEE 802.16 standard) subscriber station application based on Chartered´s 0.18 Â¿m IC process. Through simulations using a supply voltage of 1.8 V indicate a capability to deliver a maximum output power of 24 dBm to a 50 Â¿ antenna, with PO1dB of 22.7 dBm corresponding to P_O1dBof -1.89 dBm. A power gain of 25.87 dB and a voltage gain of 27 dB can be obtained through a 3-stage cascade configuration, and the power added efficiency (PAE) at P^O1dB can achieve almost 24%. In addition, this is the first WiMAX power amplifier that can operate under 1.8 V supply in the literature.

Keywords

CMOS integrated circuits; WiMax; low-power electronics; microwave power amplifiers; telecommunication standards; IEEE 802.16 standard; cascade configuration; frequency 3.5 GHz; fully integrated CMOS power amplifier; gain 25.87 dB; gain 27 dB; mobile WiMAX subscriber station; size 0.18 mum; voltage 1.8 V; Broadband amplifiers; CMOS integrated circuits; CMOS process; Gain; Linearity; Power amplifiers; Power generation; Quality of service; Voltage; WiMAX; CMOS; WiMAX; fully-integrated; low voltage; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2009 International

Conference_Location

Busan

Print_ISBN

978-1-4244-5034-3

Electronic_ISBN

978-1-4244-5035-0

Type

conf

DOI

10.1109/SOCDC.2009.5423786

Filename

5423786