Title :
An in-line contact and via hole inspection method using electron beam compensation current
Author :
Yamada, K. ; Nakamura, T. ; Tsujide, T.
Author_Institution :
Device Anal. Technol. Labs., NEC Corp, Kanagawa, Japan
Abstract :
In-line contact and via hole inspection technology will play a vital role in ensuring accelerated yield ramps and quickly identifying and resolving yield excursions in the SOC era. We have developed an in-line contact and via hole inspection method using electron beam compensation current. This method will provide a nondestructive contact and via hole inspection tool with a thickness measurement capability for the hole bottom nm order SiO/sub 2/ film and the hole diameter measurement capability as well as performing a super high inspection speed at over 1000 times faster than a SEM-based method.
Keywords :
application specific integrated circuits; electrical contacts; electron beam testing; inspection; integrated circuit testing; integrated circuit yield; nondestructive testing; SOC; accelerated yield ramps; electron beam compensation current; hole diameter measurement capability; in-line contact inspection; inspection speed; nondestructive contact; thickness measurement capability; via hole inspection method; yield excursions; Acceleration; Electron beams; Electron emission; Inspection; Production; Semiconductor device manufacture; Semiconductor device measurement; Semiconductor devices; Substrates; Thickness measurement;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824198
