Title :
Silicide induced pattern density and orientation dependent transconductance in MOS transistors
Author :
Steegen, A. ; Stucchi, M. ; Lauwers, A. ; Maex, K.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
For the first time, the influence of the mechanical stress in the transistor channel, induced by the silicide on the source(S)/drain(D) areas, on the transconductance of a MOS transistor has been studied. When scaling down the S/D dimensions, the transconductance can change up to 20% as a result of the increasing stress. This effect is channel orientation dependent. In order to keep the transconductance variation as low as possible, the formation of a low stress silicide is essential.
Keywords :
MOSFET; finite element analysis; piezoresistance; semiconductor device metallisation; semiconductor device models; stress effects; CoSi/sub 2/; FEM; MOS transistors; low stress silicide; mechanical stress; orientation dependent transconductance; silicidation; silicide induced pattern density; source/drain area; transconductance variation; transistor channel; Conductivity; MOS devices; MOSFETs; Silicides; Silicon; Substrates; Thermal expansion; Thermal stresses; Transconductance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824201
